Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems
Identifieur interne : 000574 ( Main/Exploration ); précédent : 000573; suivant : 000575Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems
Auteurs : RBID : ISTEX:604_1987_Article_BF01199510.pdfEnglish descriptors
- KwdEn :
- AES, InP, MIS-structures, SIMS.
Abstract
The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar+ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO2. The use of O2+ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO2/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO2 deposition process, e.g. for surface passivation or MIS structures.
DOI: 10.1007/BF01199510
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems</title><author><name>K. Maßeli</name><affiliation wicri:level="3"><mods:affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name>J. Burbach</name><affiliation wicri:level="3"><mods:affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name>R. Kassing</name><affiliation wicri:level="3"><mods:affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name>W. Kulisch</name><affiliation wicri:level="3"><mods:affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel</wicri:regionArea><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name>L. Niewöhner</name><affiliation wicri:level="3"><mods:affiliation>Instituto of Semiconductor Technology, University of Hannover, Appelstrasse 11 a, D-3000, Hannover, Federal Republic of Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Instituto of Semiconductor Technology, University of Hannover, Appelstrasse 11 a, D-3000, Hannover</wicri:regionArea><placeName><region type="land" nuts="2">Basse-Saxe</region><settlement type="city">Hanovre</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:604_1987_Article_BF01199510.pdf</idno><date when="1987">1987</date><idno type="doi">10.1007/BF01199510</idno><idno type="wicri:Area/Main/Corpus">000841</idno><idno type="wicri:Area/Main/Curation">000841</idno><idno type="wicri:Area/Main/Exploration">000574</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>AES</term><term>InP</term><term>MIS-structures</term><term>SIMS</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar+ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO2. The use of O2+ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO2/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO2 deposition process, e.g. for surface passivation or MIS structures.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="925c3d9e3ff30491aba884de8203426079a1a370"><titleInfo lang="eng"><title>Simultaneous SIMS/AES Measurements for the Characterization of Multilayer Systems</title></titleInfo><name type="personal"><namePart type="given">K.</namePart><namePart type="family">Maßeli</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Burbach</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Kassing</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">W.</namePart><namePart type="family">Kulisch</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto of Technical Physics, University of Kassel, Heinrich-Plett-Strasse 40, D-3500, Kassel, Federal Republic of Germany</affiliation></name><name type="personal"><namePart type="given">L.</namePart><namePart type="family">Niewöhner</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Instituto of Semiconductor Technology, University of Hannover, Appelstrasse 11 a, D-3000, Hannover, Federal Republic of Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Vienna</publisher><dateCreated encoding="w3cdtf">1987-07-17</dateCreated><dateValid encoding="w3cdtf">2005-02-04</dateValid><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The interface region of silicon dioxide layers deposited on indium phosphide was investigated by simultaneous secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) depth profile measurements. The results of such measurements depend strongly on the ion species used for sputtering. With Ar+ primary ions an enhancement of the P- and In-SIMS signals occurs in the mixing zone at the interface. This effect can be explained by an increase of the ionization yield of In and P in the presence of oxygen from the SiO2. The use of O2+ as sputter ions enlarges the phosphorus peak at the interface while the enhancement of the In-signal diminishes. The simultaneously measured AES spectra give clear evidence of oxygen bonded In and P at the interface. Additionally, preferential sputtering of phosphorus occurs. The understanding of these effects which complicate the interpretation of SIMS and AES depth profile measurements of the system SiO2/InP allows us to investigate the silicon dioxide layers and the interface region in order to optimize the SiO2 deposition process, e.g. for surface passivation or MIS structures.</abstract><subject lang="eng"><genre>Key words</genre><topic>SIMS</topic><topic>AES</topic><topic>InP</topic><topic>MIS-structures</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Mikrochim Acta</title></titleInfo><titleInfo><title>Microchimica Acta</title><subTitle>Micro and Trance Analysis</subTitle><partNumber>Year: 1987</partNumber><partNumber>Volume: 91</partNumber><partNumber>Number: 1-6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1987-01-01</dateIssued><copyrightDate encoding="w3cdtf">1987</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Analytical Chemistry</topic><topic>Inorganic Chemistry</topic><topic>Physical Chemistry</topic><topic>Characterization and Evaluation Materials</topic><topic>Monitoring/Environmental Analysis/Environmental Ecotoxicology</topic></subject><identifier type="issn">0026-3672</identifier><identifier type="issn">Electronic: 1436-5073</identifier><identifier type="matrixNumber">604</identifier><identifier type="local">IssueArticleCount: 49</identifier><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF01199510</identifier><identifier type="matrixNumber">Art35</identifier><identifier type="local">BF01199510</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>347</start><end>353</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1987</recordOrigin><recordIdentifier>604_1987_Article_BF01199510.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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